Grat-FETTM: Graphene Field-Effect Transistors.
BGTM's Grat-FETTM products are state-of-the-art, three-terminal Field-Effect Transistors (FETs) that rely on BGT Materials’s exclusive, high-mobility CVD graphene, Grat-MTM. Each Grat-FETTM chip consists of an array of 36 graphene FETs with nine different graphene channel length/width arrangements to accommodate all research and development settings.
Graphene FETs are fabricated on a Si wafer covered with a SiO2 layer, and the high-mobility Grat-MTM graphene is used as the transistor channel. The graphene transistor consists of three terminals: source and drain metal electrodes contacting the graphene channel and a global back gate enabled by the doped Si substrate. These features facilitate the characteristic ambipolar transport behavior of graphene in the Grat-FETs – achieving both n-type and p-type transport when biased with a proper gate voltage at the substrate.
As with all BGT Materials products, every Grat-FET is tested to ensure our high-quality standards are met.
Features & Benefits
|Back-gate oxide||Thermal SiO2|
|Back-gate oxide thickness||300 nm|
|Silicon substrate resistivity||0.001-0.005 Ω-cm|
|Number of graphene layers||1|
|Gate leakage current||<0.5 nA (at VBG = 100V)|
|Channel mobility||2000-3000 cm2/Vs|
|Contact metal thickness||40 – 50 nm|